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https://scholarbank.nus.edu.sg/handle/10635/96132
| Title: | Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture | Authors: | Lim, S.F. Wee, A.T.S. Lin, J. Chua, D.H.C. |
Issue Date: | 1999 | Citation: | Lim, S.F.,Wee, A.T.S.,Lin, J.,Chua, D.H.C. (1999). Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture. Surface and Interface Analysis 28 (1) : 212-216. ScholarBank@NUS Repository. | Abstract: | Carbon nitride films have been deposited on Si(100) substrates by r.f. plasma-enhanced chemical vapour deposition (r.f.-PECVD) using an ethylene-ammonia-hydrogen (C2H4-NH3-H2) source gas mixture followed by rapid thermal annealing (RTA) at 1000 °C for 2 min. The films were characterized in terms of chemical bonding, crystallinity, N/C ratio, sp3 fraction and surface topography by diffused reflectance infrared spectroscopy (DRIFT), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). | Source Title: | Surface and Interface Analysis | URI: | http://scholarbank.nus.edu.sg/handle/10635/96132 | ISSN: | 01422421 |
| Appears in Collections: | Staff Publications |
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