Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/96132
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dc.titleCrystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture
dc.contributor.authorLim, S.F.
dc.contributor.authorWee, A.T.S.
dc.contributor.authorLin, J.
dc.contributor.authorChua, D.H.C.
dc.date.accessioned2014-10-16T09:19:51Z
dc.date.available2014-10-16T09:19:51Z
dc.date.issued1999
dc.identifier.citationLim, S.F.,Wee, A.T.S.,Lin, J.,Chua, D.H.C. (1999). Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture. Surface and Interface Analysis 28 (1) : 212-216. ScholarBank@NUS Repository.
dc.identifier.issn01422421
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/96132
dc.description.abstractCarbon nitride films have been deposited on Si(100) substrates by r.f. plasma-enhanced chemical vapour deposition (r.f.-PECVD) using an ethylene-ammonia-hydrogen (C2H4-NH3-H2) source gas mixture followed by rapid thermal annealing (RTA) at 1000 °C for 2 min. The films were characterized in terms of chemical bonding, crystallinity, N/C ratio, sp3 fraction and surface topography by diffused reflectance infrared spectroscopy (DRIFT), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM).
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.description.sourcetitleSurface and Interface Analysis
dc.description.volume28
dc.description.issue1
dc.description.page212-216
dc.description.codenSIAND
dc.identifier.isiutNOT_IN_WOS
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