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|Title:||Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture||Authors:||Lim, S.F.
|Issue Date:||1999||Citation:||Lim, S.F.,Wee, A.T.S.,Lin, J.,Chua, D.H.C. (1999). Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture. Surface and Interface Analysis 28 (1) : 212-216. ScholarBank@NUS Repository.||Abstract:||Carbon nitride films have been deposited on Si(100) substrates by r.f. plasma-enhanced chemical vapour deposition (r.f.-PECVD) using an ethylene-ammonia-hydrogen (C2H4-NH3-H2) source gas mixture followed by rapid thermal annealing (RTA) at 1000 °C for 2 min. The films were characterized in terms of chemical bonding, crystallinity, N/C ratio, sp3 fraction and surface topography by diffused reflectance infrared spectroscopy (DRIFT), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM).||Source Title:||Surface and Interface Analysis||URI:||http://scholarbank.nus.edu.sg/handle/10635/96132||ISSN:||01422421|
|Appears in Collections:||Staff Publications|
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