Please use this identifier to cite or link to this item:
Title: Tuning the electron injection barrier between Co and C60 using Alq3 buffer layer
Authors: Wang, Y.-Z.
Qi, D.-C. 
Chen, S. 
Mao, H.-Y. 
Wee, A.T.S. 
Gao, X.-Y. 
Issue Date: 15-Nov-2010
Citation: Wang, Y.-Z., Qi, D.-C., Chen, S., Mao, H.-Y., Wee, A.T.S., Gao, X.-Y. (2010-11-15). Tuning the electron injection barrier between Co and C60 using Alq3 buffer layer. Journal of Applied Physics 108 (10) : -. ScholarBank@NUS Repository.
Abstract: We demonstrate that the electron injection barrier (Δe) between Co and C60 can be tuned by inserting a thin Alq3 interlayer. Using ultraviolet photoemission spectroscopy, Δe of C60 on Alq3 -predecorated Co (Δe =0.3 eV) was found to be reduced by 0.3 eV compared with that of C60 deposited directly on the bare Co metal surface (Δe =0.6 eV). Due to Fermi level pining at the Alq3 /Co interface, this tuning effect is independent of the thickness of Alq3 interlayer from multilayer to monolayer. Based on the experimental results, band level alignment diagrams are proposed for C60 /Co and C60 / Alq 3 /Co interfaces with two different Alq3 thicknesses. Our findings could have potential applications for the reduction in the carrier injection barrier in organic spin valves. © 2010 American Institute of Physics.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.3514553
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 1, 2023


checked on Feb 1, 2023

Page view(s)

checked on Feb 2, 2023

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.