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|Title:||Tuning the electron injection barrier between Co and C60 using Alq3 buffer layer||Authors:||Wang, Y.-Z.
|Issue Date:||15-Nov-2010||Citation:||Wang, Y.-Z., Qi, D.-C., Chen, S., Mao, H.-Y., Wee, A.T.S., Gao, X.-Y. (2010-11-15). Tuning the electron injection barrier between Co and C60 using Alq3 buffer layer. Journal of Applied Physics 108 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3514553||Abstract:||We demonstrate that the electron injection barrier (Δe) between Co and C60 can be tuned by inserting a thin Alq3 interlayer. Using ultraviolet photoemission spectroscopy, Δe of C60 on Alq3 -predecorated Co (Δe =0.3 eV) was found to be reduced by 0.3 eV compared with that of C60 deposited directly on the bare Co metal surface (Δe =0.6 eV). Due to Fermi level pining at the Alq3 /Co interface, this tuning effect is independent of the thickness of Alq3 interlayer from multilayer to monolayer. Based on the experimental results, band level alignment diagrams are proposed for C60 /Co and C60 / Alq 3 /Co interfaces with two different Alq3 thicknesses. Our findings could have potential applications for the reduction in the carrier injection barrier in organic spin valves. © 2010 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/95512||ISSN:||00218979||DOI:||10.1063/1.3514553|
|Appears in Collections:||Staff Publications|
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