Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3514553
Title: Tuning the electron injection barrier between Co and C60 using Alq3 buffer layer
Authors: Wang, Y.-Z.
Qi, D.-C. 
Chen, S. 
Mao, H.-Y. 
Wee, A.T.S. 
Gao, X.-Y. 
Issue Date: 15-Nov-2010
Citation: Wang, Y.-Z., Qi, D.-C., Chen, S., Mao, H.-Y., Wee, A.T.S., Gao, X.-Y. (2010-11-15). Tuning the electron injection barrier between Co and C60 using Alq3 buffer layer. Journal of Applied Physics 108 (10) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3514553
Abstract: We demonstrate that the electron injection barrier (Δe) between Co and C60 can be tuned by inserting a thin Alq3 interlayer. Using ultraviolet photoemission spectroscopy, Δe of C60 on Alq3 -predecorated Co (Δe =0.3 eV) was found to be reduced by 0.3 eV compared with that of C60 deposited directly on the bare Co metal surface (Δe =0.6 eV). Due to Fermi level pining at the Alq3 /Co interface, this tuning effect is independent of the thickness of Alq3 interlayer from multilayer to monolayer. Based on the experimental results, band level alignment diagrams are proposed for C60 /Co and C60 / Alq 3 /Co interfaces with two different Alq3 thicknesses. Our findings could have potential applications for the reduction in the carrier injection barrier in organic spin valves. © 2010 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/95512
ISSN: 00218979
DOI: 10.1063/1.3514553
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