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|Title:||Submicrometer lithography of a silicon substrate by machining of photoresist using atomic force microscopy followed by wet chemical etching||Authors:||Li, S.F.Y.
|Issue Date:||Jun-1997||Citation:||Li, S.F.Y., Ng, H.T., Zhang, P.C., Ho, P.K.H., Zhou, L., Bao, G.W., Chan, S.L.H. (1997-06). Submicrometer lithography of a silicon substrate by machining of photoresist using atomic force microscopy followed by wet chemical etching. Nanotechnology 8 (2) : 76-81. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/8/2/005||Abstract:||In this paper, the atomic force microscope (AFM) is used as a powerful technique for the machining and imaging of a nonconducting, 1.0 μm thick, photoresist. A systematic approach is adopted to determine the minimum number of passes of the AFM probe tip and the optimized maximum force that could be applied by a Si cantilever (∼ 50 N m-1) on a photoresist to achieve the desired modifications. Linear relationships are established for the number of passes to achieve the corresponding attainable depth. V-grooves are fabricated in the photoresist using high normal forces of 5 and 10 μN with a transverse speed of 10 μm s-1. With a higher manoeuvring speed of 200 μm s-1, a window is created in the photoresist without significant irregular undulation at its base. A regular window of 20.4 μm × 36.2 μm with depth 60 nm and a line window of width 1.08 μm and depth 12 nm are successfully fabricated in silicon using the photoresist machined pattern as a mask for wet preferential Si etching.||Source Title:||Nanotechnology||URI:||http://scholarbank.nus.edu.sg/handle/10635/94936||ISSN:||09574484||DOI:||10.1088/0957-4484/8/2/005|
|Appears in Collections:||Staff Publications|
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