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dc.titleSubmicrometer lithography of a silicon substrate by machining of photoresist using atomic force microscopy followed by wet chemical etching
dc.contributor.authorLi, S.F.Y.
dc.contributor.authorNg, H.T.
dc.contributor.authorZhang, P.C.
dc.contributor.authorHo, P.K.H.
dc.contributor.authorZhou, L.
dc.contributor.authorBao, G.W.
dc.contributor.authorChan, S.L.H.
dc.identifier.citationLi, S.F.Y., Ng, H.T., Zhang, P.C., Ho, P.K.H., Zhou, L., Bao, G.W., Chan, S.L.H. (1997-06). Submicrometer lithography of a silicon substrate by machining of photoresist using atomic force microscopy followed by wet chemical etching. Nanotechnology 8 (2) : 76-81. ScholarBank@NUS Repository.
dc.description.abstractIn this paper, the atomic force microscope (AFM) is used as a powerful technique for the machining and imaging of a nonconducting, 1.0 μm thick, photoresist. A systematic approach is adopted to determine the minimum number of passes of the AFM probe tip and the optimized maximum force that could be applied by a Si cantilever (∼ 50 N m-1) on a photoresist to achieve the desired modifications. Linear relationships are established for the number of passes to achieve the corresponding attainable depth. V-grooves are fabricated in the photoresist using high normal forces of 5 and 10 μN with a transverse speed of 10 μm s-1. With a higher manoeuvring speed of 200 μm s-1, a window is created in the photoresist without significant irregular undulation at its base. A regular window of 20.4 μm × 36.2 μm with depth 60 nm and a line window of width 1.08 μm and depth 12 nm are successfully fabricated in silicon using the photoresist machined pattern as a mask for wet preferential Si etching.
dc.contributor.departmentMATERIALS SCIENCE
Appears in Collections:Staff Publications

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