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|Title:||Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors||Authors:||Koh, Y.W.
|Issue Date:||2-Dec-2003||Citation:||Koh, Y.W., Lai, C.S., Du, A.Y., Tiekink, E.R.T., Loh, K.P. (2003-12-02). Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors. Chemistry of Materials 15 (24) : 4544-4554. ScholarBank@NUS Repository. https://doi.org/10.1021/cm021813k||Abstract:||Crystalline Bi2S3 nanorods, nanotapes, and nanocrystals were obtained from the solvent thermalysis of bismuth trisxanthate precursors and related bismuth dithiocarbamate species in ethylene glycol at 197 °C. Precursors with different structural motifs were designed to produce compounds with different thermal decomposition temparatures, i.e., the dimeric motif of Bi(S2COR)3 when R = methyl and ethyl was found to have a lower decomposition temperature compared to precursors adopting the polymeric structure, so that solvothermalysis of the former gave rise to short nanocrystals; while in the case of the latter, long nanofibers were produced instead. Chemical vapor deposition on silicon substrates yielded well-defined nanorods of various lengths and diameters for almost all precursors. Internal microstructure of the nanorods was studied by high-resolution transmission electron microscopy.||Source Title:||Chemistry of Materials||URI:||http://scholarbank.nus.edu.sg/handle/10635/93907||ISSN:||08974756||DOI:||10.1021/cm021813k|
|Appears in Collections:||Staff Publications|
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