Please use this identifier to cite or link to this item: https://doi.org/10.1021/cm021813k
Title: Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors
Authors: Koh, Y.W.
Lai, C.S. 
Du, A.Y.
Tiekink, E.R.T. 
Loh, K.P. 
Issue Date: 2-Dec-2003
Source: Koh, Y.W., Lai, C.S., Du, A.Y., Tiekink, E.R.T., Loh, K.P. (2003-12-02). Growth of Bismuth Sulfide Nanowire Using Bismuth Trisxanthate Single Source Precursors. Chemistry of Materials 15 (24) : 4544-4554. ScholarBank@NUS Repository. https://doi.org/10.1021/cm021813k
Abstract: Crystalline Bi2S3 nanorods, nanotapes, and nanocrystals were obtained from the solvent thermalysis of bismuth trisxanthate precursors and related bismuth dithiocarbamate species in ethylene glycol at 197 °C. Precursors with different structural motifs were designed to produce compounds with different thermal decomposition temparatures, i.e., the dimeric motif of Bi(S2COR)3 when R = methyl and ethyl was found to have a lower decomposition temperature compared to precursors adopting the polymeric structure, so that solvothermalysis of the former gave rise to short nanocrystals; while in the case of the latter, long nanofibers were produced instead. Chemical vapor deposition on silicon substrates yielded well-defined nanorods of various lengths and diameters for almost all precursors. Internal microstructure of the nanorods was studied by high-resolution transmission electron microscopy.
Source Title: Chemistry of Materials
URI: http://scholarbank.nus.edu.sg/handle/10635/93907
ISSN: 08974756
DOI: 10.1021/cm021813k
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