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|Title:||A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: The Si, Ti and N results||Authors:||Hu, Y.F.
|Issue Date:||1-Mar-2001||Citation:||Hu, Y.F., Sham, T.K., Zou, Z., Xu, G.Q., Chan, L., Yates, B.W., Bancroft, G.M. (2001-03-01). A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: The Si, Ti and N results. Journal of Synchrotron Radiation 8 (2) : 860-862. ScholarBank@NUS Repository. https://doi.org/10.1107/S0909049500018252||Abstract:||We report a multi-element, multi-edge and multi-detection mode X-ray photoabsorption study of a series of Al/TiNx/Si(100) thin films as a function of the TiNx film thickness (100Å-500Å) and of the annealing temperature (400°C-600°C). The Si K- and L-edge results show that Si does not diffuse to the surface for all the films. The high resolution Ti L-edge and N K-edge spectra show that the TiNx layer undergoes a dramatic chemical reaction with the gradual increase in the annealing temperature. This chemical reaction stabilizes at 560°C at which the TiNx film is known to fail to act as an effective diffusion barrier between Al and Si.||Source Title:||Journal of Synchrotron Radiation||URI:||http://scholarbank.nus.edu.sg/handle/10635/93017||ISSN:||09090495||DOI:||10.1107/S0909049500018252|
|Appears in Collections:||Staff Publications|
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