Please use this identifier to cite or link to this item:
https://doi.org/10.1107/S0909049500018252
DC Field | Value | |
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dc.title | A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: The Si, Ti and N results | |
dc.contributor.author | Hu, Y.F. | |
dc.contributor.author | Sham, T.K. | |
dc.contributor.author | Zou, Z. | |
dc.contributor.author | Xu, G.Q. | |
dc.contributor.author | Chan, L. | |
dc.contributor.author | Yates, B.W. | |
dc.contributor.author | Bancroft, G.M. | |
dc.date.accessioned | 2014-10-16T08:19:26Z | |
dc.date.available | 2014-10-16T08:19:26Z | |
dc.date.issued | 2001-03-01 | |
dc.identifier.citation | Hu, Y.F., Sham, T.K., Zou, Z., Xu, G.Q., Chan, L., Yates, B.W., Bancroft, G.M. (2001-03-01). A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: The Si, Ti and N results. Journal of Synchrotron Radiation 8 (2) : 860-862. ScholarBank@NUS Repository. https://doi.org/10.1107/S0909049500018252 | |
dc.identifier.issn | 09090495 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/93017 | |
dc.description.abstract | We report a multi-element, multi-edge and multi-detection mode X-ray photoabsorption study of a series of Al/TiNx/Si(100) thin films as a function of the TiNx film thickness (100Å-500Å) and of the annealing temperature (400°C-600°C). The Si K- and L-edge results show that Si does not diffuse to the surface for all the films. The high resolution Ti L-edge and N K-edge spectra show that the TiNx layer undergoes a dramatic chemical reaction with the gradual increase in the annealing temperature. This chemical reaction stabilizes at 560°C at which the TiNx film is known to fail to act as an effective diffusion barrier between Al and Si. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1107/S0909049500018252 | |
dc.source | Scopus | |
dc.subject | Diffusion barrier | |
dc.subject | Oxidation reaction | |
dc.subject | Titanium nitride | |
dc.subject | XANES | |
dc.type | Article | |
dc.contributor.department | CHEMISTRY | |
dc.description.doi | 10.1107/S0909049500018252 | |
dc.description.sourcetitle | Journal of Synchrotron Radiation | |
dc.description.volume | 8 | |
dc.description.issue | 2 | |
dc.description.page | 860-862 | |
dc.identifier.isiut | 000167298100257 | |
Appears in Collections: | Staff Publications |
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