Please use this identifier to cite or link to this item: https://doi.org/10.1107/S0909049500018252
DC FieldValue
dc.titleA study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: The Si, Ti and N results
dc.contributor.authorHu, Y.F.
dc.contributor.authorSham, T.K.
dc.contributor.authorZou, Z.
dc.contributor.authorXu, G.Q.
dc.contributor.authorChan, L.
dc.contributor.authorYates, B.W.
dc.contributor.authorBancroft, G.M.
dc.date.accessioned2014-10-16T08:19:26Z
dc.date.available2014-10-16T08:19:26Z
dc.date.issued2001-03-01
dc.identifier.citationHu, Y.F., Sham, T.K., Zou, Z., Xu, G.Q., Chan, L., Yates, B.W., Bancroft, G.M. (2001-03-01). A study of titanium nitride diffusion barriers between aluminium and silicon by X-ray absorption spectroscopy: The Si, Ti and N results. Journal of Synchrotron Radiation 8 (2) : 860-862. ScholarBank@NUS Repository. https://doi.org/10.1107/S0909049500018252
dc.identifier.issn09090495
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/93017
dc.description.abstractWe report a multi-element, multi-edge and multi-detection mode X-ray photoabsorption study of a series of Al/TiNx/Si(100) thin films as a function of the TiNx film thickness (100Å-500Å) and of the annealing temperature (400°C-600°C). The Si K- and L-edge results show that Si does not diffuse to the surface for all the films. The high resolution Ti L-edge and N K-edge spectra show that the TiNx layer undergoes a dramatic chemical reaction with the gradual increase in the annealing temperature. This chemical reaction stabilizes at 560°C at which the TiNx film is known to fail to act as an effective diffusion barrier between Al and Si.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1107/S0909049500018252
dc.sourceScopus
dc.subjectDiffusion barrier
dc.subjectOxidation reaction
dc.subjectTitanium nitride
dc.subjectXANES
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.description.doi10.1107/S0909049500018252
dc.description.sourcetitleJournal of Synchrotron Radiation
dc.description.volume8
dc.description.issue2
dc.description.page860-862
dc.identifier.isiut000167298100257
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