Toward high throughput interconvertible graphane-to-graphene growth and patterning

Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn1017389

Title:	Toward high throughput interconvertible graphane-to-graphene growth and patterning
Authors:	Wang, Y. Xu, X. Lu, J. Lin, M. Bao, Q. Özyilmaz, B. Loh, K.P.
Keywords:	graphane graphene low temperature growth pattern plasma beam deposition
Issue Date:	26-Oct-2010
Citation:	Wang, Y., Xu, X., Lu, J., Lin, M., Bao, Q., Özyilmaz, B., Loh, K.P. (2010-10-26). Toward high throughput interconvertible graphane-to-graphene growth and patterning. ACS Nano 4 (10) : 6146-6152. ScholarBank@NUS Repository. https://doi.org/10.1021/nn1017389
Abstract:	We report a new route to prepare high quality, monolayer graphene by the dehydrogenation of graphane-like film grown by plasma-enhanced chemical vapor deposition. Large-area monolayer graphane-like film is first produced by remote-discharged radio frequency plasma beam deposition at 650 °C on Cu/Ti-coated SiO2-Si. The advantages of the plasma deposition include very short deposition time (
Source Title:	ACS Nano
URI:	http://scholarbank.nus.edu.sg/handle/10635/90407
ISSN:	19360851
DOI:	10.1021/nn1017389
Appears in Collections:	Staff Publications

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