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Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn1017389
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dc.titleToward high throughput interconvertible graphane-to-graphene growth and patterning
dc.contributor.authorWang, Y.
dc.contributor.authorXu, X.
dc.contributor.authorLu, J.
dc.contributor.authorLin, M.
dc.contributor.authorBao, Q.
dc.contributor.authorÖzyilmaz, B.
dc.contributor.authorLoh, K.P.
dc.date.accessioned2014-10-09T07:04:56Z
dc.date.available2014-10-09T07:04:56Z
dc.date.issued2010-10-26
dc.identifier.citationWang, Y., Xu, X., Lu, J., Lin, M., Bao, Q., Özyilmaz, B., Loh, K.P. (2010-10-26). Toward high throughput interconvertible graphane-to-graphene growth and patterning. ACS Nano 4 (10) : 6146-6152. ScholarBank@NUS Repository. https://doi.org/10.1021/nn1017389
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/90407
dc.description.abstractWe report a new route to prepare high quality, monolayer graphene by the dehydrogenation of graphane-like film grown by plasma-enhanced chemical vapor deposition. Large-area monolayer graphane-like film is first produced by remote-discharged radio frequency plasma beam deposition at 650 °C on Cu/Ti-coated SiO2-Si. The advantages of the plasma deposition include very short deposition time (
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn1017389
dc.sourceScopus
dc.subjectgraphane
dc.subjectgraphene
dc.subjectlow temperature growth
dc.subjectpattern
dc.subjectplasma beam deposition
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentPHYSICS
dc.contributor.departmentCHEMICAL & BIOMOLECULAR ENGINEERING
dc.description.doi10.1021/nn1017389
dc.description.sourcetitleACS Nano
dc.description.volume4
dc.description.issue10
dc.description.page6146-6152
dc.identifier.isiut000283453700086
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