Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors

Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/20/8/085203

Title:	Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors
Authors:	Liao, L. Zhang, Z. Yan, B. Zheng, Z. Bao, Q.L. Wu, T. Li, C.M. Shen, Z.X. Zhang, J.X. Gong, H. Li, J.C. Yu, T.
Issue Date:	2009
Citation:	Liao, L., Zhang, Z., Yan, B., Zheng, Z., Bao, Q.L., Wu, T., Li, C.M., Shen, Z.X., Zhang, J.X., Gong, H., Li, J.C., Yu, T. (2009). Multifunctional CuO nanowire devices: P-type field effect transistors and CO gas sensors. Nanotechnology 20 (8) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/20/8/085203
Abstract:	We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (104 devices in a 25mm2 area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 °C, which makes it a promising candidate for a poisonous gas sensing nanodevice. © 2009 IOP Publishing Ltd.
Source Title:	Nanotechnology
URI:	http://scholarbank.nus.edu.sg/handle/10635/86579
ISSN:	09574484
DOI:	10.1088/0957-4484/20/8/085203
Appears in Collections:	Staff Publications

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