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|Title:||Multiferroic behavior and electrical conduction of BiFeO3 thin film deposited on quartz substrate||Authors:||Wu, J.
|Keywords:||BiFeO3 thin films
|Issue Date:||24-Sep-2010||Citation:||Wu, J., Wang, J. (2010-09-24). Multiferroic behavior and electrical conduction of BiFeO3 thin film deposited on quartz substrate. Journal of Alloys and Compounds 507 (1) : L4-L7. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2010.07.134||Abstract:||Multiferroic BiFeO3 thin films were deposited on SrRuO 3-buffered quartz substrates by off-axis radio frequency magnetron sputtering. The BiFeO3 thin film exhibits the desired multiferroic behavior (2Pr ∼ 97.41 μC/cm2 and 2Ms ∼ 10.3 emu/cm3). On the basis of the temperature- and frequency-dependent impedance studies, oxygen vacancies are shown to be responsible for the dielectric relaxation and conduction in the BiFeO 3 thin film, where the scaling behavior of imaginary part of the electric modulus suggests that the relaxation mechanism does not change over the temperature range investigated. © 2010 Elsevier B.V. All rights reserved.||Source Title:||Journal of Alloys and Compounds||URI:||http://scholarbank.nus.edu.sg/handle/10635/86572||ISSN:||09258388||DOI:||10.1016/j.jallcom.2010.07.134|
|Appears in Collections:||Staff Publications|
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