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Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jallcom.2010.07.134
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dc.titleMultiferroic behavior and electrical conduction of BiFeO3 thin film deposited on quartz substrate
dc.contributor.authorWu, J.
dc.contributor.authorWang, J.
dc.date.accessioned2014-10-07T09:52:16Z
dc.date.available2014-10-07T09:52:16Z
dc.date.issued2010-09-24
dc.identifier.citationWu, J., Wang, J. (2010-09-24). Multiferroic behavior and electrical conduction of BiFeO3 thin film deposited on quartz substrate. Journal of Alloys and Compounds 507 (1) : L4-L7. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jallcom.2010.07.134
dc.identifier.issn09258388
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86572
dc.description.abstractMultiferroic BiFeO3 thin films were deposited on SrRuO 3-buffered quartz substrates by off-axis radio frequency magnetron sputtering. The BiFeO3 thin film exhibits the desired multiferroic behavior (2Pr ∼ 97.41 μC/cm2 and 2Ms ∼ 10.3 emu/cm3). On the basis of the temperature- and frequency-dependent impedance studies, oxygen vacancies are shown to be responsible for the dielectric relaxation and conduction in the BiFeO 3 thin film, where the scaling behavior of imaginary part of the electric modulus suggests that the relaxation mechanism does not change over the temperature range investigated. © 2010 Elsevier B.V. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jallcom.2010.07.134
dc.sourceScopus
dc.subjectBiFeO3 thin films
dc.subjectImpedance study
dc.subjectMultiferroic properties
dc.subjectQuartz substrate
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1016/j.jallcom.2010.07.134
dc.description.sourcetitleJournal of Alloys and Compounds
dc.description.volume507
dc.description.issue1
dc.description.pageL4-L7
dc.description.codenJALCE
dc.identifier.isiut000283005300002
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