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https://doi.org/10.1007/s11431-008-0233-3
| Title: | High performance 1.3 μm InGaAsN superluminescent diodes | Authors: | Qu, Y. Li, H. Zhang, J.X. Bo, B. Gao, X. Liu, G. |
Keywords: | InGaAsN Schottky contact Superluminescent diodes |
Issue Date: | Aug-2009 | Citation: | Qu, Y., Li, H., Zhang, J.X., Bo, B., Gao, X., Liu, G. (2009-08). High performance 1.3 μm InGaAsN superluminescent diodes. Science in China, Series E: Technological Sciences 52 (8) : 2396-2399. ScholarBank@NUS Repository. https://doi.org/10.1007/s11431-008-0233-3 | Abstract: | High performance 1.3 μm InGaAsN superluminescent diodes (SLDs) were fabricated with Schottky contact. The structure was grown by metal organic chemical vapor deposition (MOCVD). Output power of 3 mW was obtained in continuous wave (CW) mode at room temperature. The full width at half maximum (FWHM) of the emission spectrum was 30 nm. The devices operated up to 100°C. © 2009 Science in China Press and Springer-Verlag GmbH. | Source Title: | Science in China, Series E: Technological Sciences | URI: | http://scholarbank.nus.edu.sg/handle/10635/86394 | ISSN: | 10069321 | DOI: | 10.1007/s11431-008-0233-3 |
| Appears in Collections: | Staff Publications |
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