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Please use this identifier to cite or link to this item: https://doi.org/10.1007/s11431-008-0233-3
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dc.titleHigh performance 1.3 μm InGaAsN superluminescent diodes
dc.contributor.authorQu, Y.
dc.contributor.authorLi, H.
dc.contributor.authorZhang, J.X.
dc.contributor.authorBo, B.
dc.contributor.authorGao, X.
dc.contributor.authorLiu, G.
dc.date.accessioned2014-10-07T09:50:11Z
dc.date.available2014-10-07T09:50:11Z
dc.date.issued2009-08
dc.identifier.citationQu, Y., Li, H., Zhang, J.X., Bo, B., Gao, X., Liu, G. (2009-08). High performance 1.3 μm InGaAsN superluminescent diodes. Science in China, Series E: Technological Sciences 52 (8) : 2396-2399. ScholarBank@NUS Repository. https://doi.org/10.1007/s11431-008-0233-3
dc.identifier.issn10069321
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86394
dc.description.abstractHigh performance 1.3 μm InGaAsN superluminescent diodes (SLDs) were fabricated with Schottky contact. The structure was grown by metal organic chemical vapor deposition (MOCVD). Output power of 3 mW was obtained in continuous wave (CW) mode at room temperature. The full width at half maximum (FWHM) of the emission spectrum was 30 nm. The devices operated up to 100°C. © 2009 Science in China Press and Springer-Verlag GmbH.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s11431-008-0233-3
dc.sourceScopus
dc.subjectInGaAsN
dc.subjectSchottky contact
dc.subjectSuperluminescent diodes
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1007/s11431-008-0233-3
dc.description.sourcetitleScience in China, Series E: Technological Sciences
dc.description.volume52
dc.description.issue8
dc.description.page2396-2399
dc.description.codenSCETF
dc.identifier.isiut000267593200039
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