Please use this identifier to cite or link to this item:
|Title:||Effect of residual stress on the ferroelectric property of (Pb0.90 La0.10) Ti0.975 O3 thin films||Authors:||Wu, J.
|Issue Date:||2009||Citation:||Wu, J., Xiao, D., Zhu, J. (2009). Effect of residual stress on the ferroelectric property of (Pb0.90 La0.10) Ti0.975 O3 thin films. Journal of Applied Physics 105 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3079510||Abstract:||Highly (001)-, (100)-, (101)-, and (110)-oriented (Pb0.90 La0.10) Ti0.975 O3 (PLT) thin films were deposited on the LaNiO3 (001) /Pt (111) /Ti/ SiO2 /Si (100), LaNiO3 / SiO2 /Si (100), PbTiO3 / Pt (111) /Ti/ SiO2 /Si (100), and LaNiO3 (110) /Pt (111) /Ti/ SiO2 /Si (100) substrates by rf magnetron sputtering. The orientation dependence of ferroelectric properties of the PLT films was investigated. The result shows that the (001)-oriented PLT thin films exhibit enhanced ferroelectric properties (2 Pr =61.1 μC/ cm2 and 2 Ec =179 kV/cm). The residual stress of the PLT thin films with different orientations was measured by x-ray diffraction (sin2 ψ method) for illuminating the related physical mechanisms. The result shows that the enhanced ferroelectric properties of (001)-oriented PLT thin films should be attributed to low residual stress. © 2009 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/86271||ISSN:||00218979||DOI:||10.1063/1.3079510|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.