A method to improve electrical properties of BiFeO 3 thin films

Abstract

A method is used to improve the electrical properties of BiFeO 3 thin films by modifying the Bi content in ceramic targets, where all thin films were prepared on SrRuO 3/Pt/TiO 2/SiO 2/Si(100) substrates by radio frequency sputtering. The Bi content in the ceramic target strongly affects the electrical properties of BiFeO 3 thin films. BiFeO 3 thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15 with a molar ratio demonstrate a low leakage current density and a low dielectric loss. Moreover, a larger remanent polarization of 2P r ≈ 167.6 μC/cm 2 is also demonstrated for the BiFeO 3 thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15, together with an improved fatigue behavior. Therefore, it is an effective way to improve the electrical properties of bismuth ferrite thin films by modifying the Bi content in ceramic targets. © 2012 American Chemical Society.