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|Title:||A method to improve electrical properties of BiFeO 3 thin films||Authors:||Wu, J.
|Issue Date:||28-Mar-2012||Citation:||Wu, J., Wang, J., Xiao, D., Zhu, J. (2012-03-28). A method to improve electrical properties of BiFeO 3 thin films. ACS Applied Materials and Interfaces 4 (3) : 1182-1185. ScholarBank@NUS Repository. https://doi.org/10.1021/am300236j||Abstract:||A method is used to improve the electrical properties of BiFeO 3 thin films by modifying the Bi content in ceramic targets, where all thin films were prepared on SrRuO 3/Pt/TiO 2/SiO 2/Si(100) substrates by radio frequency sputtering. The Bi content in the ceramic target strongly affects the electrical properties of BiFeO 3 thin films. BiFeO 3 thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15 with a molar ratio demonstrate a low leakage current density and a low dielectric loss. Moreover, a larger remanent polarization of 2P r ≈ 167.6 μC/cm 2 is also demonstrated for the BiFeO 3 thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15, together with an improved fatigue behavior. Therefore, it is an effective way to improve the electrical properties of bismuth ferrite thin films by modifying the Bi content in ceramic targets. © 2012 American Chemical Society.||Source Title:||ACS Applied Materials and Interfaces||URI:||http://scholarbank.nus.edu.sg/handle/10635/86171||ISSN:||19448244||DOI:||10.1021/am300236j|
|Appears in Collections:||Staff Publications|
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