Please use this identifier to cite or link to this item:
https://doi.org/10.1021/am300236j
Title: | A method to improve electrical properties of BiFeO 3 thin films | Authors: | Wu, J. Wang, J. Xiao, D. Zhu, J. |
Keywords: | bismuth content bismuth ferrite electrical properties |
Issue Date: | 28-Mar-2012 | Citation: | Wu, J., Wang, J., Xiao, D., Zhu, J. (2012-03-28). A method to improve electrical properties of BiFeO 3 thin films. ACS Applied Materials and Interfaces 4 (3) : 1182-1185. ScholarBank@NUS Repository. https://doi.org/10.1021/am300236j | Abstract: | A method is used to improve the electrical properties of BiFeO 3 thin films by modifying the Bi content in ceramic targets, where all thin films were prepared on SrRuO 3/Pt/TiO 2/SiO 2/Si(100) substrates by radio frequency sputtering. The Bi content in the ceramic target strongly affects the electrical properties of BiFeO 3 thin films. BiFeO 3 thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15 with a molar ratio demonstrate a low leakage current density and a low dielectric loss. Moreover, a larger remanent polarization of 2P r ≈ 167.6 μC/cm 2 is also demonstrated for the BiFeO 3 thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15, together with an improved fatigue behavior. Therefore, it is an effective way to improve the electrical properties of bismuth ferrite thin films by modifying the Bi content in ceramic targets. © 2012 American Chemical Society. | Source Title: | ACS Applied Materials and Interfaces | URI: | http://scholarbank.nus.edu.sg/handle/10635/86171 | ISSN: | 19448244 | DOI: | 10.1021/am300236j |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
45
checked on Mar 30, 2023
WEB OF SCIENCETM
Citations
42
checked on Mar 30, 2023
Page view(s)
387
checked on Mar 30, 2023
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.