Please use this identifier to cite or link to this item: https://doi.org/10.1021/am300236j
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dc.titleA method to improve electrical properties of BiFeO 3 thin films
dc.contributor.authorWu, J.
dc.contributor.authorWang, J.
dc.contributor.authorXiao, D.
dc.contributor.authorZhu, J.
dc.date.accessioned2014-10-07T09:47:35Z
dc.date.available2014-10-07T09:47:35Z
dc.date.issued2012-03-28
dc.identifier.citationWu, J., Wang, J., Xiao, D., Zhu, J. (2012-03-28). A method to improve electrical properties of BiFeO 3 thin films. ACS Applied Materials and Interfaces 4 (3) : 1182-1185. ScholarBank@NUS Repository. https://doi.org/10.1021/am300236j
dc.identifier.issn19448244
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/86171
dc.description.abstractA method is used to improve the electrical properties of BiFeO 3 thin films by modifying the Bi content in ceramic targets, where all thin films were prepared on SrRuO 3/Pt/TiO 2/SiO 2/Si(100) substrates by radio frequency sputtering. The Bi content in the ceramic target strongly affects the electrical properties of BiFeO 3 thin films. BiFeO 3 thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15 with a molar ratio demonstrate a low leakage current density and a low dielectric loss. Moreover, a larger remanent polarization of 2P r ≈ 167.6 μC/cm 2 is also demonstrated for the BiFeO 3 thin films prepared by using the ceramic target of Bi/Fe ≈ 1.15, together with an improved fatigue behavior. Therefore, it is an effective way to improve the electrical properties of bismuth ferrite thin films by modifying the Bi content in ceramic targets. © 2012 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/am300236j
dc.sourceScopus
dc.subjectbismuth content
dc.subjectbismuth ferrite
dc.subjectelectrical properties
dc.typeArticle
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.description.doi10.1021/am300236j
dc.description.sourcetitleACS Applied Materials and Interfaces
dc.description.volume4
dc.description.issue3
dc.description.page1182-1185
dc.identifier.isiut000301968400008
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