Please use this identifier to cite or link to this item:
https://doi.org/10.1109/ICEPT.2013.6756595
Title: | Accurate thermal characterization of a GaN PA MMIC using Thermoreflectance thermography | Authors: | Ling, J.H.L. Tay, A.A.O. Choo, K.F. |
Keywords: | IR thermography MMIC Power Amplifier Thermoreflectance |
Issue Date: | 2013 | Citation: | Ling, J.H.L.,Tay, A.A.O.,Choo, K.F. (2013). Accurate thermal characterization of a GaN PA MMIC using Thermoreflectance thermography. Proceedings - 2013 14th International Conference on Electronic Packaging Technology, ICEPT 2013 : 843-847. ScholarBank@NUS Repository. https://doi.org/10.1109/ICEPT.2013.6756595 | Abstract: | The reliability of power microwave devices is often determined by its peak operating junction temperature. In this paper, an accurate thermal characterization of a Gallium Nitride power amplifier Monolithic Microwave Integrated Circuit device using Thermoreflectance thermography is presented. The measured gate temperatures using Thermoreflectance thermography are compared with measured temperatures using Infrared thermography and calculated temperatures from finite element analysis. © 2013 IEEE. | Source Title: | Proceedings - 2013 14th International Conference on Electronic Packaging Technology, ICEPT 2013 | URI: | http://scholarbank.nus.edu.sg/handle/10635/85869 | DOI: | 10.1109/ICEPT.2013.6756595 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.