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Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICEPT.2013.6756595
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dc.titleAccurate thermal characterization of a GaN PA MMIC using Thermoreflectance thermography
dc.contributor.authorLing, J.H.L.
dc.contributor.authorTay, A.A.O.
dc.contributor.authorChoo, K.F.
dc.date.accessioned2014-10-07T09:13:08Z
dc.date.available2014-10-07T09:13:08Z
dc.date.issued2013
dc.identifier.citationLing, J.H.L.,Tay, A.A.O.,Choo, K.F. (2013). Accurate thermal characterization of a GaN PA MMIC using Thermoreflectance thermography. Proceedings - 2013 14th International Conference on Electronic Packaging Technology, ICEPT 2013 : 843-847. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ICEPT.2013.6756595" target="_blank">https://doi.org/10.1109/ICEPT.2013.6756595</a>
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/85869
dc.description.abstractThe reliability of power microwave devices is often determined by its peak operating junction temperature. In this paper, an accurate thermal characterization of a Gallium Nitride power amplifier Monolithic Microwave Integrated Circuit device using Thermoreflectance thermography is presented. The measured gate temperatures using Thermoreflectance thermography are compared with measured temperatures using Infrared thermography and calculated temperatures from finite element analysis. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/ICEPT.2013.6756595
dc.sourceScopus
dc.subjectIR thermography
dc.subjectMMIC
dc.subjectPower Amplifier
dc.subjectThermoreflectance
dc.typeConference Paper
dc.contributor.departmentMECHANICAL ENGINEERING
dc.description.doi10.1109/ICEPT.2013.6756595
dc.description.sourcetitleProceedings - 2013 14th International Conference on Electronic Packaging Technology, ICEPT 2013
dc.description.page843-847
dc.identifier.isiutNOT_IN_WOS
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