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|Title:||Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms||Authors:||Ng, T.H.
|Keywords:||Frenkel-poole (F-P) emission
|Issue Date:||2002||Citation:||Ng, T.H.,Koh, B.H.,Chim, W.K.,Choi, W.K.,Zheng, J.X.,Tung, C.H.,Du, A.Y. (2002). Zirconium dioxide as a gate dielectric in metal-insulator-silicon structures and current transport mechanisms. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 130-134. ScholarBank@NUS Repository.||Abstract:||This paper investigates the interfacial and bulk properties of zirconium dioxide as a high-k gate dielectric film and studies its current transport mechanisms. Aluminum gate/zirconium dioxide/n -type silicon (Al/ZrO 2/n-Si) metal-insulator-silicon (MIS) devices with equivalent-oxide-thickness (EOT) of ∼2.5 nm (with leakage current density of less than 2 × 10 -5 A/cm 2 at 1 V accumulation bias) were fabricated and characterized using electrical and structural analysis techniques. The simulated capacitance-voltage (C-V) curve, obtained by the self-consistent solution of Schrodinger and Poisson equations, was found to fit the measured C -V curve for the minimum (inversion) and maximum (accumulation) capacitances if dielectric constant values of IS and 25 were used for the interfacial and bulk ZrO 2 layers. It was found that the Schottky emission mechanism fits a very narrow gate voltage (V g) range of 0 < V g < 0.2 V (as this is an electrode -limited conduction) while the Frenkel-Poole (F-P) emission is the dominant current transport mechanism over 0.2 V < V g < 1.2 V in our devices. © 2002 IEEE.||Source Title:||IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE||URI:||http://scholarbank.nus.edu.sg/handle/10635/84368||ISBN:||0780375785|
|Appears in Collections:||Staff Publications|
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