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|Title:||Structural and magnetic properties of Fe2CrSi Heusler Alloy and Tunneling magnetoresistance of its magnetic tunneling junctions||Authors:||Wang, Y.-P.
|Issue Date:||2013||Citation:||Wang, Y.-P.,Qiu, J.-J.,Lu, H.,Yap, Q.-J.,Wang, W.-H.,Han, G.-C.,Ngo, D.-T.,Teo, K.-L. (2013). Structural and magnetic properties of Fe2CrSi Heusler Alloy and Tunneling magnetoresistance of its magnetic tunneling junctions. Proceedings - Winter Simulation Conference : 215-218. ScholarBank@NUS Repository. https://doi.org/10.1109/INEC.2013.6466002||Abstract:||We report the magnetic properties, microstructure and surface morphology of epitaxially grown Fe2CrSi films. Highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400 oC. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi. © 2013 IEEE.||Source Title:||Proceedings - Winter Simulation Conference||URI:||http://scholarbank.nus.edu.sg/handle/10635/84240||ISBN:||9781467348416||ISSN:||08917736||DOI:||10.1109/INEC.2013.6466002|
|Appears in Collections:||Staff Publications|
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