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Please use this identifier to cite or link to this item: https://doi.org/10.1109/INEC.2013.6466002
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dc.titleStructural and magnetic properties of Fe2CrSi Heusler Alloy and Tunneling magnetoresistance of its magnetic tunneling junctions
dc.contributor.authorWang, Y.-P.
dc.contributor.authorQiu, J.-J.
dc.contributor.authorLu, H.
dc.contributor.authorYap, Q.-J.
dc.contributor.authorWang, W.-H.
dc.contributor.authorHan, G.-C.
dc.contributor.authorNgo, D.-T.
dc.contributor.authorTeo, K.-L.
dc.date.accessioned2014-10-07T04:50:24Z
dc.date.available2014-10-07T04:50:24Z
dc.date.issued2013
dc.identifier.citationWang, Y.-P.,Qiu, J.-J.,Lu, H.,Yap, Q.-J.,Wang, W.-H.,Han, G.-C.,Ngo, D.-T.,Teo, K.-L. (2013). Structural and magnetic properties of Fe2CrSi Heusler Alloy and Tunneling magnetoresistance of its magnetic tunneling junctions. Proceedings - Winter Simulation Conference : 215-218. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/INEC.2013.6466002" target="_blank">https://doi.org/10.1109/INEC.2013.6466002</a>
dc.identifier.isbn9781467348416
dc.identifier.issn08917736
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/84240
dc.description.abstractWe report the magnetic properties, microstructure and surface morphology of epitaxially grown Fe2CrSi films. Highly ordered B2 films were obtained by deposition at room temperature followed by annealing at 400 oC. Magnetic tunnel junctions using Fe2CrSi show a tunnelling magnetoresistance (TMR) of 2.5%. The low TMR is ascribed to the oxidation of Fe2CrSi at the interface with MgO. An enhancement of TMR to 8.1% was achieved by inserting a 0.3nm Mg between Fe2CrSi and MgO to prevent the oxidation of Fe2CrSi. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/INEC.2013.6466002
dc.sourceScopus
dc.subjectFe2CrSi
dc.subjecthalf metal
dc.subjectHeusler alloy
dc.subjectMTJ
dc.subjectTMR
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/INEC.2013.6466002
dc.description.sourcetitleProceedings - Winter Simulation Conference
dc.description.page215-218
dc.description.codenWSCPD
dc.identifier.isiutNOT_IN_WOS
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