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|Title:||Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1-xO/ZnO heterostructure||Authors:||Ye, J.D.
|Issue Date:||2010||Citation:||Ye, J.D.,Lo, G.Q.,Gu, S.L.,Teo, K.L. (2010). Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1-xO/ZnO heterostructure. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD : 205-206. ScholarBank@NUS Repository. https://doi.org/10.1109/COMMAD.2010.5699741||Abstract:||In this work, we demonstrate the layer-by-layer epitaxy of Mg-composition graded ZnMgO/ZnO heterostructure on sapphire substrate by MOVPE technique. The polarization field tailored by the graded heterostructure induces wide electron slabs with high mobility at low temperature. The transport properties and mechanisms have been discussed in details. © 2010 IEEE.||Source Title:||Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD||URI:||http://scholarbank.nus.edu.sg/handle/10635/84104||ISBN:||9781424473328||DOI:||10.1109/COMMAD.2010.5699741|
|Appears in Collections:||Staff Publications|
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