Please use this identifier to cite or link to this item: https://doi.org/10.1109/COMMAD.2010.5699741
Title: Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1-xO/ZnO heterostructure
Authors: Ye, J.D.
Lo, G.Q.
Gu, S.L.
Teo, K.L. 
Issue Date: 2010
Citation: Ye, J.D.,Lo, G.Q.,Gu, S.L.,Teo, K.L. (2010). Polarization induced high mobility wide electron slabs in graded pseudomorph MgxZn1-xO/ZnO heterostructure. Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD : 205-206. ScholarBank@NUS Repository. https://doi.org/10.1109/COMMAD.2010.5699741
Abstract: In this work, we demonstrate the layer-by-layer epitaxy of Mg-composition graded ZnMgO/ZnO heterostructure on sapphire substrate by MOVPE technique. The polarization field tailored by the graded heterostructure induces wide electron slabs with high mobility at low temperature. The transport properties and mechanisms have been discussed in details. © 2010 IEEE.
Source Title: Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
URI: http://scholarbank.nus.edu.sg/handle/10635/84104
ISBN: 9781424473328
DOI: 10.1109/COMMAD.2010.5699741
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