Influence of nano-oxide layers on IrMn pinned bottom spin-valves at different positions

Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2003.12.731

Title:	Influence of nano-oxide layers on IrMn pinned bottom spin-valves at different positions
Authors:	Qiu, J.J. Li, K.B. Luo, P. Zheng, Y.K. Wu, Y.H.
Keywords:	Exchange bias Giant magnetoresistance Interlayer coupling Nano-oxide layer
Issue Date:	May-2004
Citation:	Qiu, J.J., Li, K.B., Luo, P., Zheng, Y.K., Wu, Y.H. (2004-05). Influence of nano-oxide layers on IrMn pinned bottom spin-valves at different positions. Journal of Magnetism and Magnetic Materials 272-276 (SUPPL. 1) : e1447-e1448. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2003.12.731
Abstract:	The influence of nano-oxide layer (NOL) inserted at different positions on interlayer coupling (Hin), coercivity of free layer (Hcf), exchange bias (Hex) and MR ratio of IrMn pinned bottom type spin-valves (SV) were studied. Weak antiferromagnetic interlayer coupling was observed in NOL-added SV. The NOL inside pinned layer and after free layer can enhance the MR ratio remarkably. MR of SV with a structure Ta3/NiFe2/IrMn6/ CoFe1/NOL/CoFe2.3/Cu2.2/CoFe2.3/AlO reached 18.2%. This is one of the best values ever reported for all-metal single spin-valves. © 2003 Published by Elsevier B.V.
Source Title:	Journal of Magnetism and Magnetic Materials
URI:	http://scholarbank.nus.edu.sg/handle/10635/83843
ISSN:	03048853
DOI:	10.1016/j.jmmm.2003.12.731
Appears in Collections:	Staff Publications

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