Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.jmmm.2003.12.731
DC FieldValue
dc.titleInfluence of nano-oxide layers on IrMn pinned bottom spin-valves at different positions
dc.contributor.authorQiu, J.J.
dc.contributor.authorLi, K.B.
dc.contributor.authorLuo, P.
dc.contributor.authorZheng, Y.K.
dc.contributor.authorWu, Y.H.
dc.date.accessioned2014-10-07T04:45:50Z
dc.date.available2014-10-07T04:45:50Z
dc.date.issued2004-05
dc.identifier.citationQiu, J.J., Li, K.B., Luo, P., Zheng, Y.K., Wu, Y.H. (2004-05). Influence of nano-oxide layers on IrMn pinned bottom spin-valves at different positions. Journal of Magnetism and Magnetic Materials 272-276 (SUPPL. 1) : e1447-e1448. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jmmm.2003.12.731
dc.identifier.issn03048853
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83843
dc.description.abstractThe influence of nano-oxide layer (NOL) inserted at different positions on interlayer coupling (Hin), coercivity of free layer (Hcf), exchange bias (Hex) and MR ratio of IrMn pinned bottom type spin-valves (SV) were studied. Weak antiferromagnetic interlayer coupling was observed in NOL-added SV. The NOL inside pinned layer and after free layer can enhance the MR ratio remarkably. MR of SV with a structure Ta3/NiFe2/IrMn6/ CoFe1/NOL/CoFe2.3/Cu2.2/CoFe2.3/AlO reached 18.2%. This is one of the best values ever reported for all-metal single spin-valves. © 2003 Published by Elsevier B.V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.jmmm.2003.12.731
dc.sourceScopus
dc.subjectExchange bias
dc.subjectGiant magnetoresistance
dc.subjectInterlayer coupling
dc.subjectNano-oxide layer
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.jmmm.2003.12.731
dc.description.sourcetitleJournal of Magnetism and Magnetic Materials
dc.description.volume272-276
dc.description.issueSUPPL. 1
dc.description.pagee1447-e1448
dc.description.codenJMMMD
dc.identifier.isiut000202897200561
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