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|Title:||Impact of V/III flux ratio and Si-doping concentration on grown by metalorganic chemical-vapor deposition on sapphire substrate||Authors:||Tan, L.T.
|Issue Date:||2002||Citation:||Tan, L.T.,Chen, P.,Chua, S.J. (2002). Impact of V/III flux ratio and Si-doping concentration on grown by metalorganic chemical-vapor deposition on sapphire substrate. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 172-176. ScholarBank@NUS Repository.||Abstract:||The impact of growth regime on surface morphology, crystalline structural and electrical properties of n-type GaN using metalorganic chemical-vapor deposition (MOCVD), with intentional Si doping (Sift, SO.Oppm) levels ranging from 2.Ssccm to 22.0sccm (electron concentration varying from 1.46 × 10 17 to 1.07 × 10 19 cm -3) and V/IH flux ratio from 1250 to 2800 (i.e. from Ga-rich regime to N-rich regime), are investigated. It has been found out that the V/III flux ratio affects the incorporation of Ga and N atoms into the film, and the screw dislocation generation. As for Si-incorporation, it increases the surface roughness and changes the edge dislocation generation. In this experiment, it shows clearly that those samples with V/III flux ratio of ∼1500 which is close to the equilibrium condition exhibit the best properties. © 2002 IEEE.||Source Title:||IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE||URI:||http://scholarbank.nus.edu.sg/handle/10635/83821||ISBN:||0780375785|
|Appears in Collections:||Staff Publications|
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