Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83821
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dc.titleImpact of V/III flux ratio and Si-doping concentration on grown by metalorganic chemical-vapor deposition on sapphire substrate
dc.contributor.authorTan, L.T.
dc.contributor.authorChen, P.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:45:34Z
dc.date.available2014-10-07T04:45:34Z
dc.date.issued2002
dc.identifier.citationTan, L.T.,Chen, P.,Chua, S.J. (2002). Impact of V/III flux ratio and Si-doping concentration on grown by metalorganic chemical-vapor deposition on sapphire substrate. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE : 172-176. ScholarBank@NUS Repository.
dc.identifier.isbn0780375785
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83821
dc.description.abstractThe impact of growth regime on surface morphology, crystalline structural and electrical properties of n-type GaN using metalorganic chemical-vapor deposition (MOCVD), with intentional Si doping (Sift, SO.Oppm) levels ranging from 2.Ssccm to 22.0sccm (electron concentration varying from 1.46 × 10 17 to 1.07 × 10 19 cm -3) and V/IH flux ratio from 1250 to 2800 (i.e. from Ga-rich regime to N-rich regime), are investigated. It has been found out that the V/III flux ratio affects the incorporation of Ga and N atoms into the film, and the screw dislocation generation. As for Si-incorporation, it increases the surface roughness and changes the edge dislocation generation. In this experiment, it shows clearly that those samples with V/III flux ratio of ∼1500 which is close to the equilibrium condition exhibit the best properties. © 2002 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.description.page172-176
dc.identifier.isiutNOT_IN_WOS
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