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|Title:||Exchange bias effect of Ge 1-xMn xTe with antiferromagnetic MnTe and MnO materials||Authors:||Lim, S.T.
|Issue Date:||1-Apr-2012||Citation:||Lim, S.T., Hui, L., Bi, J.F., Liew, T., Teo, K.L. (2012-04-01). Exchange bias effect of Ge 1-xMn xTe with antiferromagnetic MnTe and MnO materials. Journal of Applied Physics 111 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3675612||Abstract:||We have performed exchange biasing of ferromagnetic GeMnTe by an either MnTe or MnO antiferromagnetic overlayer. In the case of GeMnTeMnTe bilayer, we have observed only an enhancement of coercivity. While in GeMnTeMnO bilayer, both the hysteresis loop-shift and enhancement of the coercivity are exhibited. The Curie temperature (T c) and the blocking temperature (T B) of GeMnTeMnO bilayer are 60 and 20 K, respectively as compared to the T c ∼ 95 K of a GeMnTe single layer. © 2012 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83712||ISSN:||00218979||DOI:||10.1063/1.3675612|
|Appears in Collections:||Staff Publications|
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