Please use this identifier to cite or link to this item:
|Title:||Exchange bias effect of Ge 1-xMn xTe with antiferromagnetic MnTe and MnO materials||Authors:||Lim, S.T.
|Issue Date:||1-Apr-2012||Citation:||Lim, S.T., Hui, L., Bi, J.F., Liew, T., Teo, K.L. (2012-04-01). Exchange bias effect of Ge 1-xMn xTe with antiferromagnetic MnTe and MnO materials. Journal of Applied Physics 111 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3675612||Abstract:||We have performed exchange biasing of ferromagnetic GeMnTe by an either MnTe or MnO antiferromagnetic overlayer. In the case of GeMnTeMnTe bilayer, we have observed only an enhancement of coercivity. While in GeMnTeMnO bilayer, both the hysteresis loop-shift and enhancement of the coercivity are exhibited. The Curie temperature (T c) and the blocking temperature (T B) of GeMnTeMnO bilayer are 60 and 20 K, respectively as compared to the T c ∼ 95 K of a GeMnTe single layer. © 2012 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/83712||ISSN:||00218979||DOI:||10.1063/1.3675612|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 9, 2019
WEB OF SCIENCETM
checked on Oct 2, 2019
checked on Oct 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.