Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3675612
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dc.titleExchange bias effect of Ge 1-xMn xTe with antiferromagnetic MnTe and MnO materials
dc.contributor.authorLim, S.T.
dc.contributor.authorHui, L.
dc.contributor.authorBi, J.F.
dc.contributor.authorLiew, T.
dc.contributor.authorTeo, K.L.
dc.date.accessioned2014-10-07T04:44:19Z
dc.date.available2014-10-07T04:44:19Z
dc.date.issued2012-04-01
dc.identifier.citationLim, S.T., Hui, L., Bi, J.F., Liew, T., Teo, K.L. (2012-04-01). Exchange bias effect of Ge 1-xMn xTe with antiferromagnetic MnTe and MnO materials. Journal of Applied Physics 111 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3675612
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83712
dc.description.abstractWe have performed exchange biasing of ferromagnetic GeMnTe by an either MnTe or MnO antiferromagnetic overlayer. In the case of GeMnTeMnTe bilayer, we have observed only an enhancement of coercivity. While in GeMnTeMnO bilayer, both the hysteresis loop-shift and enhancement of the coercivity are exhibited. The Curie temperature (T c) and the blocking temperature (T B) of GeMnTeMnO bilayer are 60 and 20 K, respectively as compared to the T c ∼ 95 K of a GeMnTe single layer. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3675612
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3675612
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume111
dc.description.issue7
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000303282401024
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