Dislocation scattering in n-GaN

Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00019-7

Title:	Dislocation scattering in n-GaN
Authors:	Choi, H.W. Zhang, J. Chua, S.J.
Issue Date:	Dec-2001
Citation:	Choi, H.W., Zhang, J., Chua, S.J. (2001-12). Dislocation scattering in n-GaN. Materials Science in Semiconductor Processing 4 (6) : 567-570. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00019-7
Abstract:	The scattering of carriers due to dislocations is studied. Unlike semiconductors such as Si or GaAs, the major scattering mechanism for undoped or lightly doped samples is dislocation scattering instead of ionized impurity scattering. It was found that for GaN samples in the dislocation scattering region, the mobility is a function of the dislocation density and free carrier concentration, via a μdis ∝ √n/Ndis relationship. Temperature-variation mobility plots also indicate that a T3/2 dependence component is present, which is also attributed to dislocation scattering. © 2002 Published by Elsevier Science Ltd.
Source Title:	Materials Science in Semiconductor Processing
URI:	http://scholarbank.nus.edu.sg/handle/10635/83640
ISSN:	13698001
DOI:	10.1016/S1369-8001(02)00019-7
Appears in Collections:	Staff Publications

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