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Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00019-7
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dc.titleDislocation scattering in n-GaN
dc.contributor.authorChoi, H.W.
dc.contributor.authorZhang, J.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:43:31Z
dc.date.available2014-10-07T04:43:31Z
dc.date.issued2001-12
dc.identifier.citationChoi, H.W., Zhang, J., Chua, S.J. (2001-12). Dislocation scattering in n-GaN. Materials Science in Semiconductor Processing 4 (6) : 567-570. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00019-7
dc.identifier.issn13698001
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/83640
dc.description.abstractThe scattering of carriers due to dislocations is studied. Unlike semiconductors such as Si or GaAs, the major scattering mechanism for undoped or lightly doped samples is dislocation scattering instead of ionized impurity scattering. It was found that for GaN samples in the dislocation scattering region, the mobility is a function of the dislocation density and free carrier concentration, via a μdis ∝ √n/Ndis relationship. Temperature-variation mobility plots also indicate that a T3/2 dependence component is present, which is also attributed to dislocation scattering. © 2002 Published by Elsevier Science Ltd.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S1369-8001(02)00019-7
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S1369-8001(02)00019-7
dc.description.sourcetitleMaterials Science in Semiconductor Processing
dc.description.volume4
dc.description.issue6
dc.description.page567-570
dc.identifier.isiut000175066200019
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