60GHz unilateralized CMOS differential amplifier

Please use this identifier to cite or link to this item: https://doi.org/10.1109/ICMMT.2010.5524902

Title:	60GHz unilateralized CMOS differential amplifier
Authors:	Bi, X. Guo, Y. Brinkhoff, J. Leong, M.-S. Lin, F.
Issue Date:	2010
Citation:	Bi, X.,Guo, Y.,Brinkhoff, J.,Leong, M.-S.,Lin, F. (2010). 60GHz unilateralized CMOS differential amplifier. 2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010 : 204-207. ScholarBank@NUS Repository. https://doi.org/10.1109/ICMMT.2010.5524902
Abstract:	A novel unilateralization technique for a high frequency differential power amplifier is proposed to improve the gain and stability. To demonstrate the effectiveness, a differential 60-GHz power amplifier is designed based on the 90nm CMOS technique. A transformer coupled differential architecture is used in this design. By using cross coupled capacitors to realize the four-port feedback network, the inherent parasitic effects are cancelled, and the differential power amplifier is neutralized. The two-stage amplifier has a gain of 10 dB, with a center frequency of 58.5 GHz and a bandwidth of 6.3 GHz. In the maximum gain state, the output 1dB compression point is +5.1 dBm, Psat is +8.5 dBm and the peak PAE is 7.7 %, drawing 53 mA from a 1-V supply. © 2010 IEEE.
Source Title:	2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010
URI:	http://scholarbank.nus.edu.sg/handle/10635/83305
ISBN:	9781424457052
DOI:	10.1109/ICMMT.2010.5524902
Appears in Collections:	Staff Publications

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