Please use this identifier to cite or link to this item:
Title: Reduction of carrier depletion in p+ polysilicon gates using laser thermal processing
Authors: Chong, Y.F.
Gossmann, H.-J.L.
Thompson, M.O.
Pey, K.L. 
Wee, A.T.S. 
Talwar, S.
Chan, L.
Keywords: Boron penetration
Laser thermal processing
Issue Date: May-2003
Citation: Chong, Y.F., Gossmann, H.-J.L., Thompson, M.O., Pey, K.L., Wee, A.T.S., Talwar, S., Chan, L. (2003-05). Reduction of carrier depletion in p+ polysilicon gates using laser thermal processing. IEEE Electron Device Letters 24 (5) : 360-362. ScholarBank@NUS Repository.
Abstract: A novel laser thermal processing (LTP) technique was used to fabricate p+-gated MOS capacitors with ultrathin gate oxides. It is found that the introduction of LTP prior to the gate activation anneal increases the carrier concentration at the poly-Si gate/gate oxide interface substantially, as compared to rapid thermal anneal (RTA) alone. Thus, LTP readily reduces the poly-depletion effect in p+-poly-Si gates. This is achieved without observable gate oxide degradation or boron penetration. Secondary ion mass spectrometry analyzes show that the boron concentration near the gate/gate oxide interface increases significantly after the post-LTP anneal. A possible mechanism for this increase in carrier concentration is the diffusion of boron atoms toward the gate oxide by a complex process known as explosive crystallization.
Source Title: IEEE Electron Device Letters
ISSN: 07413106
DOI: 10.1109/LED.2003.812578
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Feb 6, 2023


checked on Feb 6, 2023

Page view(s)

checked on Feb 2, 2023

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.