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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4862310
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dc.titlePhenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions
dc.contributor.authorChen, B.J.
dc.contributor.authorTan, S.G.
dc.date.accessioned2014-10-07T04:34:41Z
dc.date.available2014-10-07T04:34:41Z
dc.date.issued2014
dc.identifier.citationChen, B.J., Tan, S.G. (2014). Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions. Journal of Applied Physics 115 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4862310
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82889
dc.description.abstractWe investigate the barrier imperfection and interfacial scattering effects on resistance-area product (RA) and tunneling magnetoresistance (TMR) of magnesium oxide (MgO) based magnetic tunneling junction (MTJ). We assume that barrier imperfection reduces the band gap of MgO; thus, it affects both TMR and RA values. The lattice mismatch between MgO and magnetic electrodes leads to interface scattering which reduces TMR. As an application, the MTJ two-state resistance variations due to the process variations are also discussed in the paper. © 2014 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4862310
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4862310
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume115
dc.description.issue3
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000337296400001
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