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https://doi.org/10.1063/1.4862310
| Title: | Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions | Authors: | Chen, B.J. Tan, S.G. |
Issue Date: | 2014 | Citation: | Chen, B.J., Tan, S.G. (2014). Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions. Journal of Applied Physics 115 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4862310 | Abstract: | We investigate the barrier imperfection and interfacial scattering effects on resistance-area product (RA) and tunneling magnetoresistance (TMR) of magnesium oxide (MgO) based magnetic tunneling junction (MTJ). We assume that barrier imperfection reduces the band gap of MgO; thus, it affects both TMR and RA values. The lattice mismatch between MgO and magnetic electrodes leads to interface scattering which reduces TMR. As an application, the MTJ two-state resistance variations due to the process variations are also discussed in the paper. © 2014 AIP Publishing LLC. | Source Title: | Journal of Applied Physics | URI: | http://scholarbank.nus.edu.sg/handle/10635/82889 | ISSN: | 00218979 | DOI: | 10.1063/1.4862310 |
| Appears in Collections: | Staff Publications |
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