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|Title:||Magnetization reversal and magnetoresistance behavior of perpendicularly magnetized [Co/Pd] 4/Au/[Co/Pd] 2 nanowires||Authors:||Liu, X.M.
|Issue Date:||1-Oct-2012||Citation:||Liu, X.M., Ho, P., Chen, J.S., Adeyeye, A.O. (2012-10-01). Magnetization reversal and magnetoresistance behavior of perpendicularly magnetized [Co/Pd] 4/Au/[Co/Pd] 2 nanowires. Journal of Applied Physics 112 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4754858||Abstract:||We present a systematic investigation of the magnetization reversal mechanism and magnetoresistance behavior of perpendicularly magnetized Co/Pd multilayer films and nanowires (NWs) as a function of Cu buffer layer thickness and temperature. The effect of interlayer coupling is studied by varying the Au spacer layer thickness in between two Co/Pd multilayer stacks in the [Co/Pd] 4/Au/[Co/Pd] 2 structure. We observed that compared with continuous (un-patterned) films deposited at the same time, the NWs display much stronger temperature dependent interlayer coupling due to magnetostatic interactions through the stray fields. At low temperature, the competition between the interlayer coupling and coercive field difference between the soft and hard Co/Pd multilayer stacks determines the overall magnetization reversal process and magnetoresistance behavior. © 2012 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82655||ISSN:||00218979||DOI:||10.1063/1.4754858|
|Appears in Collections:||Staff Publications|
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