Fabrication and properties of nanoporous GaN films

Abstract

The fabrication of nanopore arrays with pore diameters of approximately 75nm in GaN films by inductively coupled plasma etching using anodic aluminum oxide (AAO) films as etch masks was discussed. The nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer. The template was exposed to CF 4-based plasma conditions to minimize plasma-induced damage. It was shown that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template.