Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1774273
Title: Fabrication and properties of nanoporous GaN films
Authors: Wang, Y.D.
Chua, S.J. 
Sander, M.S.
Chen, P.
Tripathy, S.
Fonstad, C.G.
Issue Date: 2-Aug-2004
Citation: Wang, Y.D., Chua, S.J., Sander, M.S., Chen, P., Tripathy, S., Fonstad, C.G. (2004-08-02). Fabrication and properties of nanoporous GaN films. Applied Physics Letters 85 (5) : 816-818. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1774273
Abstract: The fabrication of nanopore arrays with pore diameters of approximately 75nm in GaN films by inductively coupled plasma etching using anodic aluminum oxide (AAO) films as etch masks was discussed. The nanoporous AAO films were formed on the GaN surface by evaporating an Al film onto a GaN epilayer. The template was exposed to CF 4-based plasma conditions to minimize plasma-induced damage. It was shown that the diameter and the periodicity of the nanopores in the GaN were directly transferred from the original anodic alumina template.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82334
ISSN: 00036951
DOI: 10.1063/1.1774273
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