Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2966367
Title: Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation
Authors: Xie, R.
He, W. 
Yu, M.
Zhu, C. 
Issue Date: 2008
Citation: Xie, R., He, W., Yu, M., Zhu, C. (2008). Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation. Applied Physics Letters 93 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2966367
Abstract: Effective pregate surface passivation and postgate treatments are very important to optimize the germanium metal-oxide-semiconductor (MOS) interface quality. In this work, pregate GeO2 surface passivation and postgate treatments including CF4-plasma treatment and forming gas annealing are employed to make high quality HfO2 gated germanium MOS capacitors. Excellent electrical characteristics with negligible capacitance-voltage stretch-out and frequency dispersion are achieved. The interface trap density of TaN/HfO2/Ge Ox/Ge MOS structure is as low as 2.02 × 1011 cm-2 eV-1 at the minimum. Comparing to the forming gas annealing, it is found that CF 4-plasma treatment is more effective to passivate interface states located in the upper half of Ge bandgap. © 2008 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82226
ISSN: 00036951
DOI: 10.1063/1.2966367
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