Please use this identifier to cite or link to this item:
|Title:||Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation||Authors:||Xie, R.
|Issue Date:||2008||Citation:||Xie, R., He, W., Yu, M., Zhu, C. (2008). Effects of fluorine incorporation and forming gas annealing on high- k gated germanium metal-oxide-semiconductor with GeO2 surface passivation. Applied Physics Letters 93 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2966367||Abstract:||Effective pregate surface passivation and postgate treatments are very important to optimize the germanium metal-oxide-semiconductor (MOS) interface quality. In this work, pregate GeO2 surface passivation and postgate treatments including CF4-plasma treatment and forming gas annealing are employed to make high quality HfO2 gated germanium MOS capacitors. Excellent electrical characteristics with negligible capacitance-voltage stretch-out and frequency dispersion are achieved. The interface trap density of TaN/HfO2/Ge Ox/Ge MOS structure is as low as 2.02 × 1011 cm-2 eV-1 at the minimum. Comparing to the forming gas annealing, it is found that CF 4-plasma treatment is more effective to passivate interface states located in the upper half of Ge bandgap. © 2008 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82226||ISSN:||00036951||DOI:||10.1063/1.2966367|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.