Effect of hydrostatic pressure in degenerate Ge1-x Mn x Te

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3211990

Title:	Effect of hydrostatic pressure in degenerate Ge1-x Mn x Te
Authors:	Lim, S.T. Bi, J.F. Teo, K.L. Feng, Y.P. Liew, T. Chong, T.C.
Issue Date:	2009
Citation:	Lim, S.T., Bi, J.F., Teo, K.L., Feng, Y.P., Liew, T., Chong, T.C. (2009). Effect of hydrostatic pressure in degenerate Ge1-x Mn x Te. Applied Physics Letters 95 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3211990
Abstract:	We utilize the effect of hydrostatic pressure to investigate the magnetotransport properties of degenerate p ?Ge1-x Mnx Te (x=0.10) ferromagnetic semiconductor. The Curie temperature was found to increase with pressure as 0.27 K/kbar, which can be understood on the basis of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction mechanism. For sufficiently high carrier concentration of po ∼ 1021 cm -3, both the light holes from the L valence band and the heavy holes from the valence band contribute to the RKKY interaction. Additionally, a negative magnetoresistance is observed at low temperature and is found to decrease with pressure. © 2009 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82201
ISSN:	00036951
DOI:	10.1063/1.3211990
Appears in Collections:	Staff Publications

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