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Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3211990
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dc.titleEffect of hydrostatic pressure in degenerate Ge1-x Mn x Te
dc.contributor.authorLim, S.T.
dc.contributor.authorBi, J.F.
dc.contributor.authorTeo, K.L.
dc.contributor.authorFeng, Y.P.
dc.contributor.authorLiew, T.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:26:34Z
dc.date.available2014-10-07T04:26:34Z
dc.date.issued2009
dc.identifier.citationLim, S.T., Bi, J.F., Teo, K.L., Feng, Y.P., Liew, T., Chong, T.C. (2009). Effect of hydrostatic pressure in degenerate Ge1-x Mn x Te. Applied Physics Letters 95 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3211990
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82201
dc.description.abstractWe utilize the effect of hydrostatic pressure to investigate the magnetotransport properties of degenerate p ?Ge1-x Mnx Te (x=0.10) ferromagnetic semiconductor. The Curie temperature was found to increase with pressure as 0.27 K/kbar, which can be understood on the basis of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction mechanism. For sufficiently high carrier concentration of po ∼ 1021 cm -3, both the light holes from the L valence band and the heavy holes from the valence band contribute to the RKKY interaction. Additionally, a negative magnetoresistance is observed at low temperature and is found to decrease with pressure. © 2009 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3211990
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentDATA STORAGE INSTITUTE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.3211990
dc.description.sourcetitleApplied Physics Letters
dc.description.volume95
dc.description.issue7
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000269288300047
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