An indium-free transparent resistive switching random access memory

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2126017

Title:	An indium-free transparent resistive switching random access memory
Authors:	Zheng, K. Sun, X.W. Zhao, J.L. Wang, Y. Yu, H.Y. Demir, H.V. Teo, K.L.
Keywords:	GZO indium free transparent resistive switching ZnO
Issue Date:	Jun-2011
Citation:	Zheng, K., Sun, X.W., Zhao, J.L., Wang, Y., Yu, H.Y., Demir, H.V., Teo, K.L. (2011-06). An indium-free transparent resistive switching random access memory. IEEE Electron Device Letters 32 (6) : 797-799. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2126017
Abstract:	We report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O 3-GZO structure by metalorganic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory. © 2011 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/81952
ISSN:	07413106
DOI:	10.1109/LED.2011.2126017
Appears in Collections:	Staff Publications

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