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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2011.2126017
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dc.titleAn indium-free transparent resistive switching random access memory
dc.contributor.authorZheng, K.
dc.contributor.authorSun, X.W.
dc.contributor.authorZhao, J.L.
dc.contributor.authorWang, Y.
dc.contributor.authorYu, H.Y.
dc.contributor.authorDemir, H.V.
dc.contributor.authorTeo, K.L.
dc.date.accessioned2014-10-07T04:23:37Z
dc.date.available2014-10-07T04:23:37Z
dc.date.issued2011-06
dc.identifier.citationZheng, K., Sun, X.W., Zhao, J.L., Wang, Y., Yu, H.Y., Demir, H.V., Teo, K.L. (2011-06). An indium-free transparent resistive switching random access memory. IEEE Electron Device Letters 32 (6) : 797-799. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2011.2126017
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81952
dc.description.abstractWe report an indium-free transparent resistive switching random access memory device based on GZO-Ga2O3-ZnO-Ga2O 3-GZO structure by metalorganic chemical vapor deposition. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good cycling characteristics and retention time under room temperature. The conduction and resistive switching mechanism was discussed based on filament theory. © 2011 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2011.2126017
dc.sourceScopus
dc.subjectGZO
dc.subjectindium free
dc.subjecttransparent resistive switching
dc.subjectZnO
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2011.2126017
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume32
dc.description.issue6
dc.description.page797-799
dc.description.codenEDLED
dc.identifier.isiut000290994800033
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