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|Title:||Theory of surface photovoltage in a semiconductor with a Schottky contact||Authors:||Choo, S.C.||Issue Date:||Dec-1995||Citation:||Choo, S.C. (1995-12). Theory of surface photovoltage in a semiconductor with a Schottky contact. Solid State Electronics 38 (12) : 2085-2093. ScholarBank@NUS Repository.||Abstract:||An analytical theory of surface photovoltage is developed for a semiconductor with a Schottky contact. The theory is able to predict, for light with small to large absorption coefficients, the photon flux required to yield a specified photovoltage, taking into account the three current components that describe the internal behaviour of the semiconductor, namely, the surface current, the space-charge recombination current and the bulk diffusion current. Detailed modelling of these current components is done with the help of exact numerical solutions of the drift-diffusion transport equations. The validity of the theory is confirmed by comparison with exact numerical solutions over a wide range of doping concentrations and minority-carrier lifetimes. © 1995.||Source Title:||Solid State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/81276||ISSN:||00381101|
|Appears in Collections:||Staff Publications|
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