Please use this identifier to cite or link to this item:
|Title:||Theory of surface photovoltage in a semiconductor with a Schottky contact|
|Citation:||Choo, S.C. (1995-12). Theory of surface photovoltage in a semiconductor with a Schottky contact. Solid State Electronics 38 (12) : 2085-2093. ScholarBank@NUS Repository.|
|Abstract:||An analytical theory of surface photovoltage is developed for a semiconductor with a Schottky contact. The theory is able to predict, for light with small to large absorption coefficients, the photon flux required to yield a specified photovoltage, taking into account the three current components that describe the internal behaviour of the semiconductor, namely, the surface current, the space-charge recombination current and the bulk diffusion current. Detailed modelling of these current components is done with the help of exact numerical solutions of the drift-diffusion transport equations. The validity of the theory is confirmed by comparison with exact numerical solutions over a wide range of doping concentrations and minority-carrier lifetimes. © 1995.|
|Source Title:||Solid State Electronics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Sep 21, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.